ITR20403 Features
(1)Fast response time
(2)High sensitivity
(3)Thin and small package
(4)Pb free
(5)This product itself will remain within RoHS compliant version
ITR20403 Descriptions
The ITR20403 consists of an infrared emitting diode(IR1918C)and a silicon phototransistor(PT1918B) encased in a black thermo-plastic housing. The advantage of the device is the small package. Phototransistor receives radiation from the IR LED only, and avoids the noise from ambient light.
ITR20403 Applications
(1)Camera
(2)Copier
(3)Scanner
(4)Non-contact Switching
ITR20403 Absolute Maximum Ratings (Ta=25℃)
Input Power Dissipation at(or below) 25℃ Free Air Temperature( Pd) 75mW
Input Reverse Voltage (VR) 5V
Input Forward Current ( IF) 50mA
Output Collector Power Dissipation (PC) 75mW
Output Collector Current( IC) 20mA
Output Collector-Emitter Voltage (BVCEO) 30V
Output Emitter-Collector Voltage( BVECO) 5V
Operating Temperature (Topr) -25~+80 ℃
Storage Temperature (Tstg) -40~+85 ℃
Lead Soldering Temperature (Tsol )260 ℃≦5sec
ITR20403 Electro-Optical Characteristics (Ta=25℃)
Input Forward Voltage VF ---(Typ)1.23~(Max )1.6 V ---IF=20mA
Input Reverse Current IR --- (Max)10uA--- VR=5V
Input Peak Wavelength λP ---(Typ) 940nm--- IF=20mA
Output Dark Current ICEO --- (Max)100nA--- VCE=20V
Output C-E Saturation voltage VCE(sat) ---(Max)0.4V--- IC=2mA ,Ee=1mW/cm2
Transfer Characteristics Collector Current IC(ON) 0.2~5.0mA---VCE=5V, IF=20mA
Transfer Characteristics Leakage Current ICEOD---(Max)1uA---VCE=5V, IF=20mA